Part Image

FQD5P20TM - onsemi

Description: Low gate charge ( Typ. 10nC); RoHS Compliant; Low Crss ( Typ. 12pF); 100% avalanche tested; -3.7A, -250V, RDS(on) = 1.4Ω(Max.) @VGS = -10 V, ID = -1.85A

Download FQD5P20TM Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
FQD5P20TM - onsemi PCB footprint - Other - Other - FQD5P20TM-1
click to zoom
3D Models
FQD5P20TM - onsemi  - 3D model - Other - FQD5P20TM-1
click to zoom

FQD5P20TM Details

  • Manufacturer Part Number:

    FQD5P20TM

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    DPAK-3

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.95

  • Avalanche Energy Rating (Eas):

    330 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    3.7 A

  • Drain-source On Resistance-Max:

    1.4 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    45 W

  • Pulsed Drain Current-Max (IDM):

    14.8 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQD5P20TM Frequently Asked Questions (FAQs)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2 oz copper thickness is recommended.
  • The FQD5P20TM requires a bias voltage of 5V to 15V. Ensure the bias voltage is stable and within the recommended range to maintain optimal performance.
  • The maximum SOA is defined by the voltage and current ratings. Do not exceed 200V drain-source voltage and 5A continuous drain current to prevent device damage.
  • Handle the device by the body or use an ESD wrist strap to prevent static electricity damage. Ensure the PCB design includes ESD protection components, such as TVS diodes or ESD arrays.
  • Store the device in a dry, cool place, away from direct sunlight. Handle the device by the body or use an ESD wrist strap. Avoid bending or flexing the leads during handling.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FQD5P20TM Overview

Use the download button to access the FQD5P20TM schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FQD5P, or try a keyword search, such as Power Field-Effect Transistors

Parts related to FQD5P20TM

Showing 0 results

FQD5P20TM Alternates

Showing results

Image Part Number Model
Part Image FQD5P20TM Rochester Electronics LLC

3.7A, 200V, 1.4ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3

Part Image FQD5P20TM Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 3.7A I(D), 200V, 1.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image FQD5P20TF Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 3.7A I(D), 200V, 1.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image FQD5P20 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 3.7A I(D), 200V, 1.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252