FQD5P Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	FQD5P20TM onsemi	1	Low gate charge ( Typ. 10nC); RoHS Compliant; Low Crss ( Typ. 12pF); 100% avalanche tested; -3.7A, -250V, RDS(on) = 1.4Ω(Max.) @VGS = -10 V, ID = -1.85A	Other	FQD5P20TM	3D model available Symbol and footprint available 3	1 Download Model
	FQD5P10TM onsemi	1	Low gate charge ( Typ. 6.3nC); 100% avalanche tested; -3.6A, -100V, RDS(on) = 1.05Ω(Max.) @VGS = -10 V, ID = -1.8A; Low Crss ( Typ. 18pF)	Other	FQD5P10TM	3D model not available Symbol and footprint available 2	1 Download Model
	FQD5P20TM Rochester Electronics LLC	1	3.7A, 200V, 1.4ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3		FQD5P20TM	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQD5P10 onsemi	1	Power Field-Effect Transistor, 3.6A I(D), 100V, 1.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA		FQD5P10	3D model not available Symbol and footprint not available 0	0 Build or Request

	FQD5P20TM Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 3.7A I(D), 200V, 1.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252		FQD5P20TM	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQD5P10TM Rochester Electronics LLC	1	3.6A, 100V, 1.05ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3		FQD5P10TM	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQD5P20TF Rochester Electronics LLC	1	3.7A, 200V, 1.4ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3		FQD5P20TF	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQD5P10TF Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 3.6A I(D), 100V, 1.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252		FQD5P10TF	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQD5P10TF Rochester Electronics LLC	1	3.6A, 100V, 1.05ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3		FQD5P10TF	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQD5P20TF Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 3.7A I(D), 200V, 1.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252		FQD5P20TF	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQD5P10 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 3.6A I(D), 100V, 1.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252		FQD5P10	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQD5P20 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 3.7A I(D), 200V, 1.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252		FQD5P20	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQD5P10TM Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 3.6A I(D), 100V, 1.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252		FQD5P10TM	3D model not available Symbol and footprint not available 0	0 Build or Request

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