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FQP11P06 - onsemi

Description: Fairchild FQP11P06 P-channel MOSFET Transistor, 11.4 A, -60 V, 3-Pin TO-220F

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FQP11P06 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220-ren2
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FQP11P06 - onsemi  - 3D model - Transistor Outline, Vertical - TO-220-ren2
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FQP11P06 Details

  • Manufacturer Part Number:

    FQP11P06

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3

  • Package Description:

    TO-220, 3 PIN

  • Manufacturer Package Code:

    340AT

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    160 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    11.4 A

  • Drain-source On Resistance-Max:

    0.175 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    53 W

  • Pulsed Drain Current-Max (IDM):

    45.6 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQP11P06 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FQP11P06 is -55°C to 150°C.
  • To ensure the FQP11P06 is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, and ensure the gate drive circuit can provide sufficient current to charge the gate capacitance quickly.
  • The maximum current rating for the FQP11P06 is 11A, but this is dependent on the PCB design, thermal management, and cooling system used.
  • Use a TVS (Transient Voltage Suppressor) diode or a zener diode to clamp overvoltages, and follow proper ESD handling and storage procedures to prevent damage.
  • The recommended gate resistor value for the FQP11P06 is typically in the range of 10Ω to 100Ω, depending on the specific application and gate drive circuit requirements.

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Part Image FQP11P06J69Z Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 11.4A I(D), 60V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB