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FQP17P10 - onsemi

Description: 100% avalanche tested; Low Crss ( Typ. 100pF); -16.5A, -100V, RDS(on) = 190mΩ(Max.) @VGS = -10 V, ID = -8.25A; 175°C maximum junction temperature rating; Low gate charge ( Typ. 30nC)

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Symbol
FQP17P10 - onsemi - PCB symbol
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PCB Footprints
FQP17P10 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220−3LD CASE 340AT ISSUE A_2
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3D Models
FQP17P10 - onsemi - 3D model - Transistor Outline, Vertical - TO−220−3LD CASE 340AT ISSUE A_2
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FQP17P10 Details

  • Manufacturer Part Number:

    FQP17P10

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3

  • Package Description:

    TO-220, 3 PIN

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    580 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    16.5 A

  • Drain-source On Resistance-Max:

    0.19 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    100 W

  • Pulsed Drain Current-Max (IDM):

    66 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQP17P10 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FQP17P10 is -55°C to 150°C.
  • To ensure proper biasing, the FQP17P10 requires a minimum of 10V gate-source voltage and a maximum of 20V drain-source voltage. Additionally, the gate current should be limited to 10mA to prevent overheating.
  • To minimize parasitic inductance, it is recommended to use a compact PCB layout with short, wide traces and a solid ground plane. The drain and source pins should be connected to the PCB with minimal lead length and inductance.
  • To protect the FQP17P10 from ESD, it is recommended to handle the device with an anti-static wrist strap or mat, and to use ESD-sensitive packaging and storage materials. Additionally, the device should be connected to a ground plane or ESD protection circuitry during handling and assembly.
  • The maximum allowable power dissipation for the FQP17P10 is 125W at a case temperature of 25°C. However, this value can be derated based on the operating temperature and other factors.

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FQP17P10 Overview

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