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FQP22N30 - onsemi

Description: Low gate charge ( Typ. 47nC); 100% avalanche tested; 21A, 300V, RDS(on) = 160mΩ(Max.) @VGS = 10 V, ID = 10.5A; Low Crss ( Typ. 40pF)

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PCB Footprints
FQP22N30 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - FQP22N3
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FQP22N30 - onsemi  - 3D model - Transistor Outline, Vertical - FQP22N3
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FQP22N30 Details

  • Manufacturer Part Number:

    FQP22N30

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3

  • Package Description:

    TO-220, 3 PIN

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    2 Days

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    1000 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    300 V

  • Drain Current-Max (ID):

    21 A

  • Drain-source On Resistance-Max:

    0.16 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    170 W

  • Pulsed Drain Current-Max (IDM):

    84 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQP22N30 Frequently Asked Questions (FAQs)

  • The maximum SOA for the FQP22N30 is typically defined by the device's voltage and current ratings. For the FQP22N30, the maximum voltage rating is 300V and the maximum current rating is 22A. However, it's essential to consult the datasheet and application notes for specific SOA guidelines.
  • Proper thermal management is crucial for the FQP22N30. Ensure good thermal contact between the device and a heat sink, and consider using thermal interface materials (TIMs) to minimize thermal resistance. Also, follow the recommended PCB layout and thermal design guidelines to minimize thermal hotspots.
  • The recommended gate drive voltage for the FQP22N30 is typically between 10V to 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. Consult the datasheet and application notes for more information.
  • Yes, the FQP22N30 is suitable for high-frequency switching applications. However, it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the gate drive circuitry is optimized for high-frequency operation.
  • To protect the FQP22N30 from ESD, follow proper handling and storage procedures, such as using anti-static wrist straps, mats, and bags. Also, ensure that the PCB design includes ESD protection components, such as TVS diodes or ESD protection arrays.

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FQP22N30 Overview

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