FQP22 Model Download Search Results
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FQP22N30
onsemi
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1 | Low gate charge ( Typ. 47nC); 100% avalanche tested; 21A, 300V, RDS(on) = 160mΩ(Max.) @VGS = 10 V, ID = 10.5A; Low Crss ( Typ. 40pF) | Transistor Outline, Vertical | FQP22N30 |
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FQP22P10
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 22A I(D), 100V, 0.125ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | FQP22P10 |
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FQP22P10J69Z
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 22A I(D), 100V, 0.125ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | FQP22P10J69Z |
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FQP22N30J69Z
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 21A I(D), 300V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | FQP22N30J69Z |
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FQP22N30
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 21A I(D), 300V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | FQP22N30 |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to220ab_3.jpg"])
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