Part Image

FQP3N30 - onsemi

Description: Last Shipments - Power MOSFET, N-Channel, QFET, 500 V, 3 A, 2.5 Ω, TO-220

Download FQP3N30 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
FQP3N30 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220−3LD CASE 340AT ISSUE A
click to zoom
3D Models
FQP3N30 - onsemi  - 3D model - Transistor Outline, Vertical - TO−220−3LD CASE 340AT ISSUE A
click to zoom

FQP3N30 Details

  • Manufacturer Part Number:

    FQP3N30

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3

  • Package Description:

    TO-220, 3 PIN

  • Manufacturer Package Code:

    340AT

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    140 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    300 V

  • Drain Current-Max (ID):

    3.2 A

  • Drain-source On Resistance-Max:

    2.2 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    55 W

  • Pulsed Drain Current-Max (IDM):

    12.8 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQP3N30 Frequently Asked Questions (FAQs)

  • The maximum SOA for the FQP3N30 is typically defined by the manufacturer as the region where the device can operate safely without damage. For the FQP3N30, the SOA is typically limited by the maximum drain-source voltage (Vds) and drain current (Id). Consult the datasheet and application notes for specific SOA boundaries.
  • Proper thermal management is crucial for the FQP3N30. Ensure good thermal contact between the device and a heat sink, and consider using thermal interface materials (TIMs) to reduce thermal resistance. Also, follow the recommended PCB layout and thermal design guidelines to minimize thermal impedance.
  • The recommended gate drive voltage for the FQP3N30 is typically between 4.5V and 10V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. Consult the datasheet and application notes for more information.
  • Yes, the FQP3N30 is suitable for high-frequency switching applications. However, it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the gate drive circuitry is optimized for high-frequency operation.
  • To protect the FQP3N30 from ESD, follow proper handling and storage procedures, such as using anti-static bags, wrist straps, and mats. Also, ensure that the PCB design includes ESD protection components, such as TVS diodes or ESD protection arrays.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FQP3N30 Overview

Use the download button to access the FQP3N30 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FQP3N, or try a keyword search, such as Power Field-Effect Transistors

Parts related to FQP3N30

Showing 0 results