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FQP3N60C - onsemi

Description: Last Shipments - Power MOSFET, N-Channel, QFET, 800 V, 3.0 A, 4.8 Ω, TO-220

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PCB Footprints
FQP3N60C - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220−3LD_2023-1
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3D Models
FQP3N60C - onsemi  - 3D model - Transistor Outline, Vertical - TO−220−3LD_2023-1
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FQP3N60C Details

  • Manufacturer Part Number:

    FQP3N60C

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3

  • Package Description:

    TO-220, 3 PIN

  • Manufacturer Package Code:

    340AT

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    150 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    3 A

  • Drain-source On Resistance-Max:

    3.4 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    75 W

  • Pulsed Drain Current-Max (IDM):

    12 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQP3N60C Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FQP3N60C is -55°C to 150°C.
  • To ensure proper biasing, the FQP3N60C requires a gate-source voltage (Vgs) of 10-15V for optimal performance. Additionally, a gate resistor (Rg) of 1-10kΩ is recommended to prevent oscillations.
  • The maximum current rating for the FQP3N60C is 3A continuous drain current (ID) and 6A peak drain current.
  • To protect the FQP3N60C from overvoltage and overcurrent, use a voltage regulator or a zener diode to limit the voltage, and consider adding a current sense resistor and a fuse or a current limiter to prevent overcurrent.
  • For optimal performance, use a PCB layout that minimizes parasitic inductance and capacitance. Keep the gate and source pins close together, and use a ground plane to reduce noise and electromagnetic interference (EMI).

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FQP3N60C Overview

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