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FQP45N15V2 - onsemi

Description: Low gate charge ( Typ. 72nC); Low Crss ( Typ. 135pF); 45A, 150V, RDS(on) = 40mΩ(Max.) @VGS = 10 V, ID = 22.5A; 175°C maximum junction temperature rating; 100% avalanche tested

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FQP45N15V2 Details

  • Manufacturer Part Number:

    FQP45N15V2

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3

  • Package Description:

    TO-220, 3 PIN

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.92

  • Avalanche Energy Rating (Eas):

    1124 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    45 A

  • Drain-source On Resistance-Max:

    0.04 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    176 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    220 W

  • Pulsed Drain Current-Max (IDM):

    180 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    1000 ns

  • Turn-on Time-Max (ton):

    528 ns

FQP45N15V2 Frequently Asked Questions (FAQs)

  • The maximum SOA for the FQP45N15V2 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal characteristics and voltage ratings. As a general guideline, the maximum SOA is typically limited by the device's thermal rating, which is 150°C for this device.
  • To ensure the FQP45N15V2 is fully enhanced at low gate-source voltages, it's recommended to apply a gate-source voltage (Vgs) of at least 4.5V to 5V. This will ensure the device is fully turned on and minimize the risk of thermal runaway.
  • The recommended gate resistor value for the FQP45N15V2 depends on the specific application and switching frequency. A general guideline is to use a gate resistor in the range of 10Ω to 100Ω to limit the gate current and prevent oscillations.
  • Yes, the FQP45N15V2 is suitable for high-frequency switching applications up to several hundred kHz. However, it's essential to consider the device's switching losses, gate charge, and thermal characteristics to ensure reliable operation.
  • To handle the FQP45N15V2's high peak current capability, it's essential to ensure the device is properly heatsinked and the PCB layout is designed to minimize inductance and resistance. Additionally, consider using a current sense resistor or other current monitoring techniques to prevent overcurrent conditions.

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FQP45N15V2 Overview

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Part Image FQP46N15 onsemi

Power Field-Effect Transistor, 45.6A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image FQP45N15V2_NL Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 45A I(D), 150V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB