Part Image

FQP46N15 - onsemi

Description: Last Shipments - Power MOSFET, N-Channel, Logic Level, QFET, 200 V, 3.8 A, 1.35 Ω, TO-220

Download FQP46N15 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
FQP46N15 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220−3LD CASE 340AT ISSUE A
click to zoom
3D Models
FQP46N15 - onsemi  - 3D model - Transistor Outline, Vertical - TO−220−3LD CASE 340AT ISSUE A
click to zoom

FQP46N15 Details

  • Manufacturer Part Number:

    FQP46N15

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3

  • Package Description:

    TO-220AB, 3 PIN

  • Manufacturer Package Code:

    340AT

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    650 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    45.6 A

  • Drain-source On Resistance-Max:

    0.042 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    130 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    210 W

  • Pulsed Drain Current-Max (IDM):

    182.4 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    840 ns

  • Turn-on Time-Max (ton):

    730 ns

FQP46N15 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the FQP46N15 is not explicitly stated in the datasheet. However, it can be estimated based on the device's thermal characteristics and voltage ratings. As a general guideline, the SOA is typically limited by the device's maximum junction temperature (Tj) and voltage ratings. For the FQP46N15, the maximum Tj is 175°C, and the maximum voltage rating is 150V. Therefore, the SOA would be limited to operating conditions that do not exceed these ratings.
  • To ensure the FQP46N15 is properly driven to minimize switching losses, it is essential to provide a high-quality gate drive signal. This can be achieved by using a gate driver IC or a dedicated gate drive circuit that provides a fast rise and fall time, low impedance, and sufficient current capability. Additionally, the gate-source voltage (Vgs) should be set to the recommended value (typically 10-15V) to ensure the device is fully enhanced. It is also important to minimize the gate resistance and inductance to reduce the switching losses.
  • For optimal performance and reliability, it is essential to follow good PCB layout practices and thermal management techniques when using the FQP46N15. This includes using a multi-layer PCB with a solid ground plane, keeping the device's drain and source pins as close as possible, and using thermal vias to dissipate heat. Additionally, a heat sink or thermal pad can be used to improve heat dissipation. It is also recommended to follow the manufacturer's guidelines for PCB layout and thermal management.
  • To protect the FQP46N15 from overvoltage and overcurrent conditions, it is essential to implement proper protection circuits and design considerations. This includes using voltage clamping devices such as zener diodes or transient voltage suppressors (TVS) to limit the voltage across the device. Additionally, overcurrent protection can be achieved using current sense resistors, fuses, or electronic fuses. It is also important to ensure the device is operated within its recommended operating conditions and to follow the manufacturer's guidelines for protection and design considerations.
  • The reliability and lifespan expectations for the FQP46N15 depend on various factors, including the operating conditions, environmental factors, and quality of the device. According to the manufacturer's datasheet, the FQP46N15 has a typical lifespan of 10-15 years under normal operating conditions. However, this can vary depending on the specific application and operating conditions. It is essential to follow the manufacturer's guidelines and recommendations for ensuring the device's reliability and lifespan.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FQP46N15 Overview

Use the download button to access the FQP46N15 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FQP46, or try a keyword search, such as Power Field-Effect Transistors

Parts related to FQP46N15

Showing 0 results

FQP46N15 Alternates

Showing results

Image Part Number Model
Part Image FQP45N15V2 onsemi

Power Field-Effect Transistor, 45A I(D), 150V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image FQP45N15V2_NL Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 45A I(D), 150V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB