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FQP9N50C - onsemi

Description: onsemi FQP9N50C View 3 Transistor Outline, Vertical

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PCB Footprints
FQP9N50C - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220, Molded, 3-Lead, Jedec Variation AB
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FQP9N50C - onsemi  - 3D model - Transistor Outline, Vertical - TO-220, Molded, 3-Lead, Jedec Variation AB
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FQP9N50C Details

  • Manufacturer Part Number:

    FQP9N50C

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3

  • Package Description:

    TO-220, 3 PIN

  • Manufacturer Package Code:

    340AT

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    360 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    9 A

  • Drain-source On Resistance-Max:

    0.8 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    36 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQP9N50C Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the FQP9N50C is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal characteristics and voltage ratings. As a general guideline, the SOA is typically limited by the device's maximum junction temperature (Tj) and voltage ratings. For the FQP9N50C, the maximum Tj is 150°C, and the maximum voltage rating is 500V. Therefore, the SOA would be limited to operating conditions that do not exceed these ratings.
  • To ensure the FQP9N50C is properly biased for optimal performance, follow these guidelines: 1) Ensure the gate-source voltage (Vgs) is within the recommended range (typically -2V to 2V). 2) Use a gate resistor (Rg) to limit the gate current and prevent oscillations. 3) Use a drain-source resistor (Rds) to limit the drain current and prevent overheating. 4) Ensure the device is operated within its recommended operating frequency range (typically up to 100 kHz). 5) Use a suitable heat sink to maintain a safe junction temperature (Tj).
  • For optimal performance and thermal management, follow these PCB layout and thermal management guidelines: 1) Use a multi-layer PCB with a solid ground plane to reduce electromagnetic interference (EMI). 2) Place the FQP9N50C near the center of the PCB to minimize thermal gradients. 3) Use a thermal pad or heat sink with a thermal interface material (TIM) to improve heat transfer. 4) Ensure good airflow around the device to prevent overheating. 5) Use thermal vias to connect the thermal pad to the ground plane or a heat sink.
  • To protect the FQP9N50C from electrostatic discharge (ESD), follow these guidelines: 1) Handle the device by the body or use an anti-static wrist strap to prevent static buildup. 2) Use an ESD-protected workstation or mat. 3) Store the device in an anti-static bag or container. 4) Use ESD-protected packaging materials during shipping and storage. 5) Implement ESD protection circuits or devices in the application circuit to prevent ESD damage.
  • The reliability and lifetime expectations for the FQP9N50C are dependent on various factors, including operating conditions, temperature, and usage patterns. However, as a general guideline, the FQP9N50C is designed to meet the following reliability standards: 1) Mean time between failures (MTBF) of 10^6 hours or more. 2) Failure rate of less than 10 FIT (failures per billion hours). 3) Operating lifetime of 10-20 years or more, depending on the application and operating conditions.

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FQP9N50C Overview

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Part Image FQP9N50C_NL Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 9A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB