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FQP9N90C - onsemi

Description: Low gate charge ( Typ. 45nC); 8A, 900V, RDS(on) = 1.4Ω(Max.) @VGS = 10 V, ID = 4A; Low Crss ( Typ. 14pF); 100% avalanche tested

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FQP9N90C - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220−3LD CASE 340AT ISSUE A_2
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FQP9N90C - onsemi  - 3D model - Transistor Outline, Vertical - TO−220−3LD CASE 340AT ISSUE A_2
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FQP9N90C Details

  • Manufacturer Part Number:

    FQP9N90C

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.2

  • Avalanche Energy Rating (Eas):

    900 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    900 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    1.4 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    205 W

  • Pulsed Drain Current-Max (IDM):

    32 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQP9N90C Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the FQP9N90C is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal characteristics and voltage ratings. As a general guideline, the SOA is typically limited by the device's maximum junction temperature (Tj) and voltage ratings. For the FQP9N90C, the maximum Tj is 150°C, and the maximum voltage rating is 900V. Engineers should consult the application notes and thermal design guidelines provided by onsemi for more information.
  • To ensure the FQP9N90C is properly biased for optimal performance, engineers should follow the recommended biasing conditions outlined in the datasheet and application notes. This typically involves setting the gate-source voltage (Vgs) within the recommended range (e.g., 4-10V) and ensuring the drain-source voltage (Vds) is within the maximum rating (900V). Additionally, engineers should consider the device's threshold voltage (Vth) and ensure the gate drive is sufficient to fully enhance the device.
  • For optimal performance and reliability, engineers should follow recommended PCB layout and thermal design guidelines for the FQP9N90C. This includes using a multi-layer PCB with a solid ground plane, minimizing trace lengths and widths, and ensuring adequate thermal dissipation through the use of heat sinks or thermal interfaces. Engineers should consult the application notes and thermal design guidelines provided by onsemi for more information.
  • To protect the FQP9N90C from overvoltage and overcurrent conditions, engineers should implement suitable protection circuits and design considerations. This may include the use of voltage clamping devices, such as zener diodes or transient voltage suppressors, and current limiting resistors or fuses. Additionally, engineers should ensure the device is operated within its recommended voltage and current ratings, and consider the use of overvoltage and overcurrent protection ICs.
  • The recommended gate drive and switching characteristics for the FQP9N90C depend on the specific application and operating conditions. As a general guideline, engineers should ensure the gate drive is sufficient to fully enhance the device, with a recommended gate-source voltage (Vgs) of 10-15V. The switching frequency and rise/fall times should be optimized for the specific application, taking into account the device's switching characteristics and thermal limitations.

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Part Image FQP9N90C Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 8A I(D), 900V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB