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FQPF10N20C - onsemi

Description: 100% avalanche tested; Low gate charge ( Typ. 20nC); Low Crss ( Typ. 40.5pF); 9.5A, 200V, RDS(on) = 360mΩ(Max.) @VGS = 10 V, ID = 4.75A

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Symbol
FQPF10N20C - onsemi - PCB symbol
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PCB Footprints
FQPF10N20C - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - FQPF10N20C
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3D Models
FQPF10N20C - onsemi - 3D model - Transistor Outline, Vertical - FQPF10N20C
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FQPF10N20C Details

  • Manufacturer Part Number:

    FQPF10N20C

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3 FullPak

  • Package Description:

    TO-220F, 3 PIN

  • Manufacturer Package Code:

    221AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    210 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    9.5 A

  • Drain-source On Resistance-Max:

    0.36 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    38 W

  • Pulsed Drain Current-Max (IDM):

    38 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQPF10N20C Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the FQPF10N20C is 150°C. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • To ensure proper biasing, make sure to provide a stable gate-source voltage (Vgs) between 2V to 5V, and a drain-source voltage (Vds) within the recommended operating range. Also, ensure the gate current is limited to the recommended maximum value.
  • For optimal thermal performance, use a PCB with a thick copper layer (at least 2 oz) and a thermal relief pattern under the device. Ensure good thermal conductivity between the device and the heat sink or PCB. A thermal interface material (TIM) can be used to improve heat transfer.
  • Yes, the FQPF10N20C is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the device is properly biased and the PCB layout is optimized for high-frequency operation to minimize parasitic inductance and capacitance.
  • Handle the device with ESD-protective equipment and follow proper ESD handling procedures. Use an ESD-protected workstation and ensure that all personnel handling the device are grounded. Avoid touching the device's pins or leads to prevent ESD damage.

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FQPF10N20C Overview

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FQPF10N20C Alternates

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Part Image FQPF10N20C_NL Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 9.5A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB