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FQPF13N06L - onsemi

Description: Low Crss ( Typ. 17pF); 175°C maximum junction temperature rating; Low gate charge ( Typ. 4.8nC); 100% avalanche tested; 10A, 60V, RDS(on) = 110mΩ(Max.) @VGS = 10 V, ID = 5A

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FQPF13N06L - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - FQPF630
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FQPF13N06L - onsemi  - 3D model - Transistor Outline, Vertical - FQPF630
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FQPF13N06L Details

  • Manufacturer Part Number:

    FQPF13N06L

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3 FullPak

  • Package Description:

    TO-220F, 3 PIN

  • Manufacturer Package Code:

    221AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    90 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    10 A

  • Drain-source On Resistance-Max:

    0.14 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    24 W

  • Pulsed Drain Current-Max (IDM):

    40 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQPF13N06L Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the FQPF13N06L can withstand is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • To ensure proper cooling, it's essential to provide a good thermal path from the device to a heat sink or a metal core PCB. Apply a thin layer of thermal interface material (TIM) between the device and the heat sink, and ensure the heat sink is properly mounted and secured.
  • The recommended gate resistor value for the FQPF13N06L is between 10Ω to 100Ω. A higher value can help reduce oscillations, but may slow down the switching speed. A lower value can improve switching speed, but may increase oscillations.
  • Yes, the FQPF13N06L is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching losses, gate charge, and thermal performance when designing the application.
  • To protect the FQPF13N06L from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, consider using a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions.

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FQPF13N06L Overview

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Part Image FQPF13N06L Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 10A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET