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FQPF19N20C - onsemi

Description: 19A, 200V, RDS(on) = 170mΩ(Max.) @VGS = 10 V, ID = 9.5A; 100% avalanche tested; Low Crss ( Typ. 85pF); Low gate charge ( Typ. 40.5nC)

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PCB Footprints
FQPF19N20C - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO220F
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FQPF19N20C - onsemi  - 3D model - Transistor Outline, Vertical - TO220F
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FQPF19N20C Details

  • Manufacturer Part Number:

    FQPF19N20C

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3 FullPak

  • Package Description:

    TO-220F, 3 PIN

  • Manufacturer Package Code:

    221AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.85

  • Avalanche Energy Rating (Eas):

    433 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    19 A

  • Drain-source On Resistance-Max:

    0.17 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    43 W

  • Pulsed Drain Current-Max (IDM):

    76 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQPF19N20C Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the FQPF19N20C is 150°C. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • To ensure proper biasing, make sure to provide a stable gate-source voltage (Vgs) between 2V to 5V, and a drain-source voltage (Vds) within the recommended operating range. Also, ensure the gate current is limited to the recommended maximum value.
  • For optimal thermal performance, use a PCB with a thick copper layer (at least 2 oz) and ensure good thermal conductivity. Place the device on a heat sink or a thermal pad, and use thermal vias to dissipate heat. Keep the PCB layout compact and symmetrical to minimize thermal gradients.
  • To protect the FQPF19N20C from ESD, use anti-static wrist straps, mats, or floors when handling the device. Ensure the PCB has ESD protection diodes or resistors, and consider adding a TVS (transient voltage suppressor) or ESD protection IC.
  • Store the FQPF19N20C in its original packaging or an anti-static bag. Avoid exposing the device to moisture, direct sunlight, or extreme temperatures. Handle the device by the body, not the leads, and avoid bending or flexing the leads.

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FQPF19N20C Overview

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