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FQPF20N06L - onsemi

Description: Low Crss ( Typ. 35pF); Low gate charge ( Typ. 9.5nC); 100% avalanche tested; 175°C maximum junction temperature rating; 15.7A, 60V, RDS(on) = 52mΩ(Max.) @VGS = 10 V, ID = 7.85A

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Symbol
FQPF20N06L - onsemi - PCB symbol
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PCB Footprints
FQPF20N06L - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220 Fullpack, 3−Lead / TO−220F−3SG CASE 221AT ISSUE B-1
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3D Models
FQPF20N06L - onsemi - 3D model - Transistor Outline, Vertical - TO−220 Fullpack, 3−Lead / TO−220F−3SG CASE 221AT ISSUE B-1
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  • Datasheet Download Datasheet
  • Stock & Prices $ Price & Stock for FQPF20N06L
  • Part Number FQPF20N06L
  • Manufacturer onsemi
  • Pin Count 3
  • Part Category MOSFET (N-Channel)
  • Package Category Transistor Outline, Vertical
  • Footprint Name Transistor Outline, Vertical - TO−220 Fullpack, 3−Lead / TO−220F−3SG CASE 221AT ISSUE B-1
  • Released Date Jul 23, 2021
  • Last Modified Date Jan 22, 2025 4:53 PM UTC
  • Pinout / Pin List Click Here (Member Only)

FQPF20N06L Details

  • Manufacturer Part Number:

    FQPF20N06L

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3 FullPak

  • Package Description:

    TO-220F, 3 PIN

  • Manufacturer Package Code:

    221AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    170 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    15.7 A

  • Drain-source On Resistance-Max:

    0.07 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    30 W

  • Pulsed Drain Current-Max (IDM):

    62.8 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQPF20N06L Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the FQPF20N06L can withstand is 150°C. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, ensure good thermal contact between the device and heat sink, and provide adequate airflow around the heat sink.
  • The recommended gate drive voltage for the FQPF20N06L is between 10V and 15V. However, the gate drive voltage should be limited to 12V to ensure reliable operation and prevent damage to the device.
  • Yes, the FQPF20N06L is suitable for high-frequency switching applications up to 100 kHz. However, the device's switching losses and thermal performance should be carefully evaluated to ensure reliable operation.
  • To protect the FQPF20N06L from ESD, handle the device by the body or use an ESD wrist strap or mat. Ensure that the device is stored in an anti-static bag or tube, and avoid touching the device's pins or leads.

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FQPF20N06L Overview

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