Part Image

FQPF27P06 - onsemi

Description: -17A, -60V, RDS(on) = 26mΩ(Max.) @VGS = -10 V, ID = -8.5A; Low gate charge ( Typ. 33nC); Low Crss ( Typ. 120pF); 100% avalanche tested; 175°C maximum junction temperature rating

Download FQPF27P06 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
FQPF27P06 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220 Fullpack, 3−Lead / TO−220F−3SG CASE 221AT ISSUE B
click to zoom
3D Models
FQPF27P06 - onsemi  - 3D model - Transistor Outline, Vertical - TO−220 Fullpack, 3−Lead / TO−220F−3SG CASE 221AT ISSUE B
click to zoom
  • Datasheet Download Datasheet
  • Stock & Prices $ Price & Stock for FQPF27P06
  • Part Number FQPF27P06
  • Manufacturer onsemi
  • Pin Count 3
  • Part Category MOSFET (P-Channel)
  • Package Category Transistor Outline, Vertical
  • Footprint Name Transistor Outline, Vertical - TO−220 Fullpack, 3−Lead / TO−220F−3SG CASE 221AT ISSUE B
  • Released Date Aug 28, 2022
  • Last Modified Date Jan 22, 2025 4:53 PM UTC
  • Pinout / Pin List Click Here (Member Only)

FQPF27P06 Details

  • Manufacturer Part Number:

    FQPF27P06

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3 FullPak

  • Manufacturer Package Code:

    221AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    560 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    17 A

  • Drain-source On Resistance-Max:

    0.07 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    47 W

  • Pulsed Drain Current-Max (IDM):

    68 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQPF27P06 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FQPF27P06 is -55°C to 150°C.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor, and connect the source to ground through a resistor. The recommended bias voltage is typically around 10-15V.
  • The maximum current rating for the FQPF27P06 is 27A.
  • Use a voltage regulator to limit the voltage, and consider adding overcurrent protection devices such as fuses or current-sensing resistors to prevent damage from excessive current.
  • Use a multi-layer PCB with a solid ground plane, and keep the power traces short and wide to minimize inductance and resistance. Also, ensure good thermal conductivity to dissipate heat.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FQPF27P06 Overview

Use the download button to access the FQPF27P06 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FQPF2, or try a keyword search, such as Power Field-Effect Transistors

Parts related to FQPF27P06

Showing 0 results