FQPF2N60C - onsemi

Description: 2A, 600V, RDS(on) = 4.7Ω(Max.) @VGS = 10 V, ID = 1A; Low Crss ( Typ. 4.3pF); 100% avalanche tested; Low gate charge ( Typ. 8.5nC)

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Image	Part Number	Model
	FQPF2N60C Fairchild Semiconductor Corporation Power Field-Effect Transistor, 2A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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FQPF2N60C - onsemi

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