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FQPF2N80 - onsemi

Description: 1.5A, 800V, RDS(on) = 6.3Ω(Max.) @VGS = 10 V, ID = 0.75A; Low Crss ( Typ. 5.5pF); 100% avalanche tested; Low gate charge ( Typ. 12nC)

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FQPF2N80 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO220,Molded,3-Lead,Full Pack,EIAJ SC91 straight Lead
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3D Models
FQPF2N80 - onsemi  - 3D model - Transistor Outline, Vertical - TO220,Molded,3-Lead,Full Pack,EIAJ SC91 straight Lead
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  • Datasheet Download Datasheet
  • Stock & Prices $ Price & Stock for FQPF2N80
  • Part Number FQPF2N80
  • Manufacturer onsemi
  • Pin Count 3
  • Part Category Transistor
  • Package Category Transistor Outline, Vertical
  • Footprint Name Transistor Outline, Vertical - TO220,Molded,3-Lead,Full Pack,EIAJ SC91 straight Lead
  • Released Date Dec 31, 2020
  • Last Modified Date Jan 22, 2025 4:53 PM UTC
  • Pinout / Pin List Click Here (Member Only)

FQPF2N80 Details

  • Manufacturer Part Number:

    FQPF2N80

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3 FullPak

  • Package Description:

    TO-220F, 3 PIN

  • Manufacturer Package Code:

    221AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    7 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.2

  • Avalanche Energy Rating (Eas):

    180 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain Current-Max (ID):

    1.5 A

  • Drain-source On Resistance-Max:

    6.3 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    35 W

  • Pulsed Drain Current-Max (IDM):

    6 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQPF2N80 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the FQPF2N80 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A safe operating area can be defined as the region where the device can operate without exceeding its maximum junction temperature, voltage, and current ratings. Typically, this region is bounded by the maximum voltage and current ratings, as well as the thermal resistance of the device.
  • To ensure the FQPF2N80 is properly biased for optimal performance, follow these guidelines: 1) Ensure the gate-source voltage (Vgs) is within the recommended range (typically -2V to 2V). 2) Use a gate resistor (Rg) to limit the gate current and prevent oscillations. 3) Choose a suitable gate driver or controller that can provide the required voltage and current to the gate. 4) Ensure the drain-source voltage (Vds) is within the recommended range (typically 0V to 80V). 5) Use a suitable heatsink and thermal management system to maintain a safe junction temperature.
  • For optimal performance and thermal management, follow these PCB layout and thermal design guidelines: 1) Use a multi-layer PCB with a solid ground plane to reduce thermal resistance and electromagnetic interference (EMI). 2) Place the FQPF2N80 near the edge of the PCB to facilitate heat dissipation. 3) Use a thermal pad or heat sink with a thermal interface material (TIM) to improve heat transfer. 4) Ensure good thermal conduction paths between the device and the heat sink. 5) Avoid placing components with high thermal resistance near the FQPF2N80.
  • To protect the FQPF2N80 from electrostatic discharge (ESD), follow these guidelines: 1) Handle the device by the body or use an ESD wrist strap or mat to prevent static buildup. 2) Use ESD-sensitive packaging and storage materials. 3) Ground all equipment and tools before handling the device. 4) Use an ESD protection device, such as a TVS diode or ESD protection IC, in the circuit. 5) Ensure the PCB design includes ESD protection features, such as ESD diodes or resistors.
  • The reliability and lifetime expectations for the FQPF2N80 depend on various factors, including operating conditions, environmental factors, and manufacturing quality. Typically, the device is designed to meet the following reliability standards: 1) Mean time between failures (MTBF) > 100,000 hours. 2) Failure rate < 10 FIT (failures per billion hours). 3) Operating lifetime > 10 years. However, actual reliability and lifetime may vary depending on the specific application and operating conditions.

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FQPF2N80 Overview

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