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FQPF30N06L - onsemi

Description: Obsolete - Power MOSFET, N-Channel, QFET, 200 V, 28 A, 82 mΩ, TO-220F

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PCB Footprints
FQPF30N06L - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220F_2023
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3D Models
FQPF30N06L - onsemi  - 3D model - Transistor Outline, Vertical - TO-220F_2023
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FQPF30N06L Details

  • Manufacturer Part Number:

    FQPF30N06L

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3 FullPak

  • Package Description:

    TO-220F, 3 PIN

  • Manufacturer Package Code:

    221AT

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    350 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    22.5 A

  • Drain-source On Resistance-Max:

    0.045 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    38 W

  • Pulsed Drain Current-Max (IDM):

    90 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQPF30N06L Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the FQPF30N06L can withstand is 150°C. However, it's recommended to operate the device at a junction temperature below 125°C for reliable operation.
  • To ensure the FQPF30N06L is properly biased, make sure to provide a gate-source voltage (Vgs) between 4V to 10V, and a drain-source voltage (Vds) within the recommended operating range. Also, ensure the device is operated within the recommended current and power dissipation limits.
  • For optimal thermal performance, use a PCB with a thick copper layer (at least 2 oz) and a thermal relief pattern under the device. Ensure good thermal conductivity between the device and the heat sink or PCB. A thermal interface material (TIM) can be used to improve heat transfer.
  • Yes, the FQPF30N06L is suitable for high-frequency switching applications up to 1 MHz. However, ensure that the device is properly biased and the PCB layout is optimized for high-frequency operation to minimize parasitic inductance and capacitance.
  • To protect the FQPF30N06L from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the PCB and components are properly grounded. Use ESD-sensitive handling procedures during assembly and storage.

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FQPF30N06L Overview

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