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FQPF5N50CYDTU - onsemi

Description: Last Shipments - Power MOSFET, N-Channel, QFET, 600 V, 4.5 A, 2.5 Ω, TO-220F

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FQPF5N50CYDTU - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220F-ren3
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FQPF5N50CYDTU - onsemi  - 3D model - Transistor Outline, Vertical - TO-220F-ren3
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FQPF5N50CYDTU Details

  • Manufacturer Part Number:

    FQPF5N50CYDTU

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3

  • Package Description:

    TO-220F, 3 PIN

  • Manufacturer Package Code:

    340BJ

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    2 Days

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    300 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    5 A

  • Drain-source On Resistance-Max:

    1.4 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    38 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQPF5N50CYDTU Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the FQPF5N50CYDTU is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure proper cooling, it's essential to provide a good thermal path from the device to a heat sink or a heat spreader. Use a thermal interface material (TIM) to fill any gaps between the device and the heat sink, and ensure the heat sink is properly mounted and secured.
  • The recommended gate drive voltage for the FQPF5N50CYDTU is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. Consult the datasheet and application notes for more information.
  • Yes, the FQPF5N50CYDTU is suitable for high-reliability applications. It's manufactured using a robust process and has undergone rigorous testing to ensure its quality and reliability. However, it's essential to follow proper design and manufacturing guidelines to ensure the device operates within its specified parameters.
  • To protect the FQPF5N50CYDTU from ESD, handle the device by the body or use an anti-static wrist strap or mat. Ensure the device is stored in an anti-static bag or container, and avoid touching the device's pins or leads during handling.

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FQPF5N50CYDTU Overview

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