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FQPF5P20 - onsemi

Description: Obsolete - Power MOSFET, P-Channel, QFET, -200 V, -3.4 A, 1.4 Ω, TO-220F

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PCB Footprints
FQPF5P20 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - to-220--ren2
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FQPF5P20 - onsemi  - 3D model - Transistor Outline, Vertical - to-220--ren2
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FQPF5P20 Details

  • Manufacturer Part Number:

    FQPF5P20

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3 FullPak

  • Package Description:

    TO-220F, 3 PIN

  • Manufacturer Package Code:

    221AT

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    330 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    3.4 A

  • Drain-source On Resistance-Max:

    1.4 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    38 W

  • Pulsed Drain Current-Max (IDM):

    13.6 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQPF5P20 Frequently Asked Questions (FAQs)

  • A good PCB layout for the FQPF5P20 should include a solid copper plane on the bottom layer for heat dissipation, and a thermal relief pattern around the drain pad to prevent thermal gradients. Additionally, keeping the drain and source pins as close as possible to the PCB's thermal plane can help reduce thermal resistance.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended derating curves for the FQPF5P20. This includes reducing the maximum drain current and voltage as the temperature increases. Additionally, using a heat sink or thermal interface material can help keep the junction temperature within the recommended range.
  • The FQPF5P20's high di/dt rating requires careful PCB design to minimize parasitic inductance and ensure reliable operation. This includes using short, wide traces for the drain and source connections, and placing the device close to the power supply decoupling capacitors to reduce loop inductance.
  • To protect the FQPF5P20 from overvoltage and overcurrent conditions, it's recommended to use a voltage clamp or transient voltage suppressor (TVS) diode on the drain pin. Additionally, implementing overcurrent protection using a sense resistor and a comparator can help prevent damage from excessive current.
  • The FQPF5P20 has an integrated ESD protection diode, but it's still important to follow proper ESD handling procedures during assembly and testing. This includes using an ESD wrist strap or mat, and storing the devices in anti-static packaging.

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FQPF5P20 Overview

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Part Image FQPF5P20 Rochester Electronics LLC

3.4A, 200V, 1.4ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220F, 3 PIN

Part Image FQPF5P20 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 3.4A I(D), 200V, 1.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET