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FQPF70N10 - onsemi

Description: 100% avalanche tested; "; 175°C maximum junction temperature rating"; Low Crss ( Typ. 150pF); Low gate charge ( Typ. 85nC); 35A, 100V, RDS(on) = 23mΩ(Max.) @VGS = 10 V, ID = 17.5A

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FQPF70N10 - onsemi - PCB symbol
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PCB Footprints
FQPF70N10 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220,Molded,3-lead,Full Pack,
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3D Models
FQPF70N10 - onsemi - 3D model - Transistor Outline, Vertical - TO-220,Molded,3-lead,Full Pack,
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FQPF70N10 Details

  • Manufacturer Part Number:

    FQPF70N10

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3 FullPak

  • Manufacturer Package Code:

    221AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    50 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    1300 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    35 A

  • Drain-source On Resistance-Max:

    0.023 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    62 W

  • Pulsed Drain Current-Max (IDM):

    140 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQPF70N10 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the FQPF70N10 is not explicitly stated in the datasheet. However, it is recommended to follow the guidelines provided in the application note AND8039/D for ensuring safe operating conditions.
  • To ensure proper thermal management, it is recommended to follow the thermal design guidelines provided in the application note AND8039/D. This includes using a heat sink with a thermal resistance of less than 1°C/W and ensuring good thermal contact between the device and the heat sink.
  • The recommended gate drive circuit for the FQPF70N10 is a non-inverting gate drive with a gate resistance of 10-20 ohms and a gate-source voltage of 10-15V. A suitable gate drive IC is the FAN5350 or equivalent.
  • To protect the FQPF70N10 from overvoltage and overcurrent, it is recommended to use a voltage clamp circuit and a current sense resistor in series with the device. Additionally, a fuse or a circuit breaker can be used to protect against overcurrent conditions.
  • The recommended PCB layout for the FQPF70N10 includes using a multi-layer board with a solid ground plane, keeping the high-current paths short and wide, and using a Kelvin connection for the source pin. A detailed layout guide is provided in the application note AND8039/D.

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FQPF70N10 Overview

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