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FQPF7N65C - onsemi

Description: 100% avalanche tested; Low Crss ( Typ. 12pF); Low gate charge ( Typ. 28nC); 7A, 650V, RDS(on) = 1.4Ω(Max.) @VGS = 10 V, ID = 3.5A

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FQPF7N65C - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220F */
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FQPF7N65C - onsemi  - 3D model - Transistor Outline, Vertical - TO-220F */
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FQPF7N65C Details

  • Manufacturer Part Number:

    FQPF7N65C

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3 FullPak

  • Package Description:

    TO-220F, 3 PIN

  • Manufacturer Package Code:

    221AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    FAST SWITCHING

  • Avalanche Energy Rating (Eas):

    212 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    7 A

  • Drain-source On Resistance-Max:

    1.4 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    52 W

  • Pulsed Drain Current-Max (IDM):

    28 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQPF7N65C Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the FQPF7N65C is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • To ensure proper biasing, follow the recommended gate-source voltage (Vgs) and drain-source voltage (Vds) ratings specified in the datasheet. Additionally, ensure the gate drive circuit is capable of providing the required current and voltage to maintain a stable gate-source voltage.
  • For optimal thermal performance, use a multi-layer PCB with a thermal relief pattern under the device. Ensure good thermal conductivity between the device and the heat sink or thermal pad. Follow the recommended land pattern and thermal design guidelines provided in the datasheet or application notes.
  • Yes, the FQPF7N65C is suitable for high-frequency switching applications. However, ensure that the device is properly biased and the PCB layout is optimized for high-frequency operation. Follow the recommended guidelines for high-frequency design and layout in the datasheet or application notes.
  • Implement overvoltage protection (OVP) and overcurrent protection (OCP) circuits to prevent damage to the device. Use a voltage regulator or a zener diode to clamp the voltage, and consider adding a current sense resistor and a comparator to detect overcurrent conditions.

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FQPF7N65C Overview

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