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FQPF7P20 - onsemi

Description: Low Crss ( Typ. 25pF); Low gate charge ( Typ. 19nC); -5.2A, -200V, RDS(on) = 0.69Ω(Max.) @VGS = -10 V, ID = -2.6A; 100% avalanche tested

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FQPF7P20 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead-----
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FQPF7P20 - onsemi  - 3D model - Transistor Outline, Vertical - TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead-----
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  • Datasheet Download Datasheet
  • Stock & Prices $ Price & Stock for FQPF7P20
  • Part Number FQPF7P20
  • Manufacturer onsemi
  • Pin Count 3
  • Part Category MOSFET (P-Channel)
  • Package Category Transistor Outline, Vertical
  • Footprint Name Transistor Outline, Vertical - TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead-----
  • Released Date Nov 16, 2022
  • Last Modified Date Jan 22, 2025 4:53 PM UTC
  • Pinout / Pin List Click Here (Member Only)

FQPF7P20 Details

  • Manufacturer Part Number:

    FQPF7P20

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3 FullPak

  • Package Description:

    TO-220F, 3 PIN

  • Manufacturer Package Code:

    221AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.75

  • Avalanche Energy Rating (Eas):

    560 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    5.2 A

  • Drain-source On Resistance-Max:

    0.69 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    45 W

  • Pulsed Drain Current-Max (IDM):

    20.8 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQPF7P20 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FQPF7P20 is -40°C to 150°C.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor, and connect the source to ground through a resistor. The recommended bias voltage is 15V.
  • The maximum current rating for the FQPF7P20 is 20A.
  • Use a voltage regulator to limit the voltage to the recommended maximum, and add a current limiter or fuse to prevent overcurrent.
  • Yes, the FQPF7P20 is suitable for switching applications, but ensure the switching frequency is within the recommended range and the device is properly biased.

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FQPF7P20 Overview

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Part Image FQPF7P20 Rochester Electronics LLC

5.2A, 200V, 0.69ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220F, 3 PIN

Part Image FQPF7P20 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 5.2A I(D), 200V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET