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FQPF8N80C - onsemi

Description: Trans MOSFET N-CH 800V 8A 3-Pin TO-220F

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FQPF8N80C - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220F-ren1
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FQPF8N80C - onsemi  - 3D model - Transistor Outline, Vertical - TO-220F-ren1
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FQPF8N80C Details

  • Manufacturer Part Number:

    FQPF8N80C

  • Brand Name:

    ON Semiconductor

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-220F, 3 PIN

  • Manufacturer Package Code:

    221AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6.2

  • Avalanche Energy Rating (Eas):

    850 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    1.55 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    59 W

  • Pulsed Drain Current-Max (IDM):

    32 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQPF8N80C Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the FQPF8N80C is 150°C, but it's recommended to keep it below 125°C for reliable operation.
  • To ensure proper biasing, make sure to provide a stable gate-source voltage (Vgs) between 2V and 5V, and a drain-source voltage (Vds) within the recommended operating range.
  • For optimal thermal performance, use a multi-layer PCB with a thermal relief pattern, and ensure good thermal conductivity between the device and the heat sink. A heat sink with a thermal resistance of 1°C/W or lower is recommended.
  • Yes, the FQPF8N80C is suitable for high-frequency switching applications up to 1 MHz. However, ensure that the gate drive circuitry is optimized for high-frequency operation, and consider using a gate resistor to minimize ringing.
  • Use a voltage clamp or a zener diode to protect against overvoltage, and consider adding a current sense resistor and a fuse to detect and respond to overcurrent conditions.

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FQPF8N80C Overview

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Part Image FQPF8N80C Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 8A I(D), 800V, 1.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image FQPF8N80CYDTU onsemi

Power Field-Effect Transistor, 8A I(D), 800V, 1.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB