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FQPF9P25 - onsemi

Description: 100% avalanche tested; Low gate charge ( Typ. 29nC); Low Crss ( Typ. 27pF); -6A, -250V, RDS(on) = 0.62Ω(Max.) @VGS = -10 V, ID = -3A

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FQPF9P25 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - to220---
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FQPF9P25 - onsemi  - 3D model - Transistor Outline, Vertical - to220---
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FQPF9P25 Details

  • Manufacturer Part Number:

    FQPF9P25

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3 FullPak

  • Manufacturer Package Code:

    221AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    34 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    650 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    250 V

  • Drain Current-Max (ID):

    6 A

  • Drain-source On Resistance-Max:

    0.62 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    50 W

  • Pulsed Drain Current-Max (IDM):

    24 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQPF9P25 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FQPF9P25 is -40°C to 150°C.
  • To ensure proper biasing, follow the recommended operating conditions outlined in the datasheet, including the recommended voltage and current levels. Additionally, ensure the device is properly decoupled and bypassed to minimize noise and oscillations.
  • For optimal thermal performance, use a multi-layer PCB with a solid ground plane and thermal vias to dissipate heat. Ensure the device is mounted on a heat sink or thermal pad, and follow the recommended thermal management guidelines outlined in the datasheet.
  • To troubleshoot issues, start by verifying the device is properly biased and configured according to the datasheet. Use oscilloscopes and logic analyzers to monitor signals and identify potential issues. Consult the datasheet and application notes for guidance on debugging common issues.
  • Handle the FQPF9P25 with ESD-sensitive precautions, such as using wrist straps, anti-static bags, and ESD-safe workstations. Follow the recommended handling and storage procedures outlined in the datasheet to prevent damage from electrostatic discharge.

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FQPF9P25 Overview

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Part Image FQPF9P25 Fairchild Semiconductor Corporation

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