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FQT4N20LTF - onsemi

Description: Low gate charge ( Typ. 4nC); 100% avalanche tested; Low Crss ( Typ. 6pF); Low level gate drive requirments allowingdirect operationfrom logic drives; 0.85A, 200V, RDS(on) = 1.35Ω(Typ.) @VGS = 10 V, ID = 0.425A

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PCB Footprints
FQT4N20LTF - onsemi PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - SOT-223
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3D Models
FQT4N20LTF - onsemi  - 3D model - SOT223 (3-Pin) - SOT-223
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FQT4N20LTF Details

  • Manufacturer Part Number:

    FQT4N20LTF

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOT-223-4 / TO-261-4

  • Manufacturer Package Code:

    318H-01

  • Country Of Origin:

    South Korea

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    17 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    52 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    0.85 A

  • Drain-source On Resistance-Max:

    1.4 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.2 W

  • Pulsed Drain Current-Max (IDM):

    3.4 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQT4N20LTF Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the FQT4N20LTF is 150°C. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • To ensure proper biasing, make sure to provide a gate-source voltage (Vgs) between 2V and 5V, and a drain-source voltage (Vds) within the recommended operating range. Also, ensure the gate current is limited to the recommended maximum value.
  • For optimal thermal performance, use a PCB with a thermal relief pattern and a heat sink with a thermal interface material. Ensure good thermal conductivity between the device and the heat sink. Also, keep the PCB layout compact and symmetrical to minimize thermal gradients.
  • To protect the FQT4N20LTF from ESD, use proper handling and storage procedures, such as using anti-static bags and wrist straps. Also, ensure the PCB design includes ESD protection components, such as TVS diodes or ESD protection arrays.
  • The FQT4N20LTF has a typical lifespan of 10-15 years, depending on operating conditions. It's designed to meet the reliability requirements of automotive and industrial applications, with a failure rate of less than 10 FIT (failures per billion hours) at 125°C.

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FQT4N20LTF Overview

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