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FQT4N25TF - onsemi

Description: Low gate charge ( Typ. 4.3nC); 0.83A, 250V, RDS(on) = 1.75Ω(Max.) @VGS = 10 V, ID = 0.415A; Low Crss ( Typ. 4.8pF)

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FQT4N25TF - onsemi - PCB symbol
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PCB Footprints
FQT4N25TF - onsemi PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - FQT4N25TF
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FQT4N25TF - onsemi - 3D model - SOT223 (3-Pin) - FQT4N25TF
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FQT4N25TF Details

  • Manufacturer Part Number:

    FQT4N25TF

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOT-223-4 / TO-261-4

  • Package Description:

    SOT-223, 4 PIN

  • Manufacturer Package Code:

    318H-01

  • Country Of Origin:

    South Korea

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    52 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    250 V

  • Drain Current-Max (ID):

    0.83 A

  • Drain-source On Resistance-Max:

    1.75 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Pulsed Drain Current-Max (IDM):

    3.3 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQT4N25TF Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the FQT4N25TF is 150°C. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • To ensure proper biasing, make sure to provide a stable gate-source voltage (Vgs) between 2V and 5V, and a drain-source voltage (Vds) within the recommended operating range. Also, ensure the gate current is limited to the recommended maximum value.
  • For optimal thermal performance, use a multi-layer PCB with a thermal relief pattern under the device. Ensure good thermal conductivity by using a thermal interface material (TIM) and a heat sink if necessary. Keep the PCB layout compact and symmetrical to minimize thermal gradients.
  • Handle the device by the body or use an anti-static wrist strap to prevent ESD damage. Use ESD-protected workstations and follow proper ESD handling procedures. Ensure the PCB design includes ESD protection components, such as TVS diodes or ESD protection arrays.
  • Use a gate drive circuit that provides a fast rise and fall time (tr/tf < 10ns) and a voltage swing of 10-15V. A bootstrap circuit or a dedicated gate driver IC can be used. Ensure the gate drive circuit is properly decoupled and filtered to prevent noise and oscillations.

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FQT4N25TF Overview

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