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FQT7N10TF - onsemi

Description: 100% avalanche tested; Low Crss ( Typ. 10pF); 1.7A, 100V, RDS(on) = 350mΩ(Max.) @VGS = 10 V, ID = 0.85A; Low gate charge ( Typ. 5.8nC)

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PCB Footprints
FQT7N10TF - onsemi PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - SOT−223 CASE 318H ISSUE B
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3D Models
FQT7N10TF - onsemi  - 3D model - SOT223 (3-Pin) - SOT−223 CASE 318H ISSUE B
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FQT7N10TF Details

  • Manufacturer Part Number:

    FQT7N10TF

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOT-223-4 / TO-261-4

  • Package Description:

    SOT-223, 3 PIN

  • Manufacturer Package Code:

    318H-01

  • Country Of Origin:

    South Korea

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    50 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    1.7 A

  • Drain-source On Resistance-Max:

    0.35 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2 W

  • Pulsed Drain Current-Max (IDM):

    6.8 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQT7N10TF Frequently Asked Questions (FAQs)

  • A 2-layer PCB with a thermal relief pattern on the bottom layer and a solid ground plane on the top layer is recommended. This layout helps to dissipate heat efficiently and reduces thermal resistance.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor (e.g., 1 kΩ) and add a pull-down resistor (e.g., 10 kΩ) from the gate to ground. This configuration helps to prevent unwanted turn-on and ensures stable operation.
  • The recommended gate drive voltage for the FQT7N10TF is between 10 V and 15 V. This voltage range provides a good balance between switching speed and power losses.
  • Use a voltage clamp or a transient voltage suppressor (TVS) to protect the device from overvoltage conditions. Additionally, consider adding a current sense resistor and a fuse to detect and respond to overcurrent conditions.
  • The maximum allowed case temperature for the FQT7N10TF is 150°C. Operating the device above this temperature can reduce its lifespan and affect its performance.

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FQT7N10TF Overview

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