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FQU11P06TU - onsemi

Description: Low Gate Charge ( Typ. 13nC); Low Crss ( Typ. 45pF); 100% Avalanche Tested; -9.4A, -60V, RDS(on) = 185mΩ(Max.) @VGS = -10 V, ID = -4.7A

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FQU11P06TU - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - DPAK3 (IPAK) CASE 369AR ISSUE O
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FQU11P06TU - onsemi  - 3D model - Transistor Outline, Vertical - DPAK3 (IPAK) CASE 369AR ISSUE O
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FQU11P06TU Details

  • Manufacturer Part Number:

    FQU11P06TU

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    IPAK-3 / DPAK-3 STRAIGHT LEAD

  • Package Description:

    IPAK-3

  • Manufacturer Package Code:

    369AR

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    56 Weeks, 4 Days

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    160 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    9.4 A

  • Drain-source On Resistance-Max:

    0.185 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    60 pF

  • JEDEC-95 Code:

    TO-251

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    38 W

  • Pulsed Drain Current-Max (IDM):

    37.6 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    140 ns

  • Turn-on Time-Max (ton):

    115 ns

FQU11P06TU Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
  • Ensure a stable input voltage (Vin) between 4.5V to 5.5V, and a bias voltage (Vb) of 2.5V to 5V. Use a low-ESR capacitor (e.g., 10uF) for input decoupling and a 1uF capacitor for output decoupling.
  • The maximum power dissipation is 2.5W. Ensure the device is mounted on a suitable heat sink and the ambient temperature is within the recommended range (–40°C to 150°C).
  • Use a TVS diode or a zener diode for overvoltage protection. Implement overcurrent protection using a fuse or a current-sensing resistor with a comparator and a switch.
  • The recommended operating frequency range is up to 1MHz. However, the device can operate up to 2MHz with reduced performance and increased power consumption.

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FQU11P06TU Overview

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Image Part Number Model
Part Image FQU11P06 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 9.4A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251