FQU11 Model Download Search Results
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FQU11P06TU
onsemi
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1 | Low Gate Charge ( Typ. 13nC); Low Crss ( Typ. 45pF); 100% Avalanche Tested; -9.4A, -60V, RDS(on) = 185mΩ(Max.) @VGS = -10 V, ID = -4.7A | Transistor Outline, Vertical | FQU11P06TU |
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FQU11P06
onsemi
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1 | FAIRCHILD SEMICONDUCTOR - FQU11P06 - MOSFET, P CH,-60V,-9.4A, I-PAK | Transistor Outline, Vertical | FQU11P06 |
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FQU11P06TU
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 9.4A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | FQU11P06TU |
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FQU11P06TU
Rochester Electronics LLC
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1 | 9.4A, 60V, 0.185ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3 | FQU11P06TU |
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FQU11P06
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 9.4A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | FQU11P06 |
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![Part Image](["https://componentsearchengine.com/Images/1/FQU11P06.jpg",null,null])
![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to251_3.jpg"])
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