Part Image

FQU1N60CTU - onsemi

Description: N-Channel 600 V 1A (Tc) 2.5W (Ta), 28W (Tc) Through Hole IPAK

Download FQU1N60CTU Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
FQU1N60CTU - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - DPAK3 (IPAK) CASE 369AR ISSUE O
click to zoom
3D Models
FQU1N60CTU - onsemi  - 3D model - Transistor Outline, Vertical - DPAK3 (IPAK) CASE 369AR ISSUE O
click to zoom

FQU1N60CTU Details

  • Manufacturer Part Number:

    FQU1N60CTU

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    IPAK-3 / DPAK-3 STRAIGHT LEAD

  • Package Description:

    IPAK-3

  • Manufacturer Package Code:

    369AR

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    33 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    1 A

  • Drain-source On Resistance-Max:

    3.4 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-251AA

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    28 W

  • Pulsed Drain Current-Max (IDM):

    4 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQU1N60CTU Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for FQU1N60CTU is a standard SOT223 package with a minimum pad size of 2.5mm x 2.5mm and a thermal pad size of 3.5mm x 3.5mm.
  • To ensure reliable operation of FQU1N60CTU in high-temperature environments, it is recommended to follow proper thermal management practices, such as providing adequate heat sinking and ensuring good airflow around the device.
  • The maximum allowed voltage transient for FQU1N60CTU is 80V, as specified in the datasheet. Exceeding this voltage may cause damage to the device.
  • Yes, FQU1N60CTU can be used in switching applications, but it is recommended to follow proper switching guidelines and ensure that the device is operated within its safe operating area (SOA) to prevent damage.
  • The power dissipation of FQU1N60CTU can be calculated using the formula: Pd = (Vds x Ids) + (Vgs x Igs), where Vds is the drain-source voltage, Ids is the drain-source current, Vgs is the gate-source voltage, and Igs is the gate-source current.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FQU1N60CTU Overview

Use the download button to access the FQU1N60CTU schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FQU1N, or try a keyword search, such as Power Field-Effect Transistors

Parts related to FQU1N60CTU

Showing 0 results