FQU1N Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	FQU1N60CTU onsemi	1	N-Channel 600 V 1A (Tc) 2.5W (Ta), 28W (Tc) Through Hole IPAK	Transistor Outline, Vertical	FQU1N60CTU	3D model available Symbol and footprint available 3	1 Download Model
	FQU1N80TU onsemi	1	1.0A, 800V, RDS(on) = 20Ω (Max.) @ VGS = 10 V, ID = 0.5 A; Low Gate Charge (Typ. 5.5 nC); Low Crss (Typ. 2.7 pF); 100% Avalanche Tested	Transistor Outline, Vertical	FQU1N80TU	3D model available Symbol and footprint available 3	1 Download Model
	FQU1N60 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 1A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251		FQU1N60	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQU1N50 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 1.1A I(D), 500V, 9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251		FQU1N50	3D model not available Symbol and footprint not available 0	0 Build or Request

	FQU1N60C Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 1A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FQU1N60C	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQU1N80 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 1A I(D), 800V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251		FQU1N80	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQU1N60CTU Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 1A I(D), 600V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA		FQU1N60CTU	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQU1N60C onsemi	1	Power Field-Effect Transistor, 1A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FQU1N60C	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQU1N60TU Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 1A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251		FQU1N60TU	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQU1N60TU Rochester Electronics LLC	1	1A, 600V, 11.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3		FQU1N60TU	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQU1N50BTU Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 1.1A I(D), 500V, 9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251		FQU1N50BTU	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQU1N80TU Rochester Electronics LLC	1	1A, 800V, 20ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3		FQU1N80TU	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQU1N50TU Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 1.1A I(D), 500V, 9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251		FQU1N50TU	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQU1N50B Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 1.1A I(D), 500V, 9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251		FQU1N50B	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQU1N80TU Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 1A I(D), 800V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251		FQU1N80TU	3D model not available Symbol and footprint not available 0	0 Build or Request

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