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FQU1N80TU - onsemi

Description: 1.0A, 800V, RDS(on) = 20Ω (Max.) @ VGS = 10 V, ID = 0.5 A; Low Gate Charge (Typ. 5.5 nC); Low Crss (Typ. 2.7 pF); 100% Avalanche Tested

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Symbol
FQU1N80TU - onsemi - PCB symbol
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PCB Footprints
FQU1N80TU - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - N-Channel 800 V 1A (Tc) 2.5W (Ta), 45W (Tc) Through Hole IPAK*
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3D Models
FQU1N80TU - onsemi - 3D model - Transistor Outline, Vertical - N-Channel 800 V 1A (Tc) 2.5W (Ta), 45W (Tc) Through Hole IPAK*
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  • Datasheet Download Datasheet
  • Stock & Prices $ Price & Stock for FQU1N80TU
  • Part Number FQU1N80TU
  • Manufacturer onsemi
  • Pin Count 3
  • Part Category MOSFET (N-Channel)
  • Package Category Transistor Outline, Vertical
  • Footprint Name Transistor Outline, Vertical - N-Channel 800 V 1A (Tc) 2.5W (Ta), 45W (Tc) Through Hole IPAK*
  • Released Date May 12, 2021
  • Last Modified Date Jan 22, 2025 4:53 PM UTC
  • Pinout / Pin List Click Here (Member Only)

FQU1N80TU Details

  • Manufacturer Part Number:

    FQU1N80TU

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    IPAK-3 / DPAK-3 STRAIGHT LEAD

  • Package Description:

    IPAK-3

  • Manufacturer Package Code:

    369AR

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    90 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain Current-Max (ID):

    1 A

  • Drain-source On Resistance-Max:

    20 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-251

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    45 W

  • Pulsed Drain Current-Max (IDM):

    4 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQU1N80TU Frequently Asked Questions (FAQs)

  • The maximum operating junction temperature of FQU1N80TU is 150°C, but it's recommended to keep it below 125°C for reliable operation.
  • To ensure proper biasing, make sure to provide a stable voltage supply, keep the gate-source voltage within the recommended range (typically -2V to 2V), and use a suitable gate resistor to prevent oscillations.
  • For optimal thermal management, use a PCB with a thick copper layer, keep the component away from heat sources, and use thermal vias to dissipate heat. A good layout should also minimize parasitic inductance and capacitance.
  • While FQU1N80TU can be used in switching applications, its performance may degrade at high frequencies (>100kHz) due to increased switching losses. Consider using a more suitable device or optimizing the design to minimize losses.
  • To protect the FQU1N80TU from ESD, use proper handling and storage procedures, implement ESD protection circuits in the design, and ensure that the device is properly grounded during assembly and testing.

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FQU1N80TU Overview

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