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FQU2N100TU - onsemi

Description: Low Crss ( Typ. 5pF); 100% avalanche tested; Low gate charge ( Typ. 12nC); RoHS Compliant; 1.6A, 1000V, RDS(on) = 9Ω(Max.) @VGS = 10 V, ID = 0.8A

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FQU2N100TU Details

  • Manufacturer Part Number:

    FQU2N100TU

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    IPAK-3 / DPAK-3 STRAIGHT LEAD

  • Manufacturer Package Code:

    369AR

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    160 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1000 V

  • Drain Current-Max (ID):

    1.6 A

  • Drain-source On Resistance-Max:

    9 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    50 W

  • Pulsed Drain Current-Max (IDM):

    6.4 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQU2N100TU Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the FQU2N100TU is 150°C. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor (e.g., 1 kΩ) and add a pull-down resistor (e.g., 10 kΩ) from the gate to ground. This helps to prevent unwanted turn-on and ensures stable operation.
  • The recommended gate drive voltage for the FQU2N100TU is between 10 V and 15 V. This ensures reliable turn-on and minimizes switching losses.
  • Use a voltage clamp or a transient voltage suppressor (TVS) to protect the FQU2N100TU from overvoltage. For overcurrent protection, consider adding a current sense resistor and a fuse or a current limiter in the circuit.
  • The thermal resistance of the FQU2N100TU package is typically around 1.5°C/W (junction-to-case) and 60°C/W (junction-to-ambient) in still air. However, this can vary depending on the specific application and cooling conditions.

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FQU2N100TU Overview

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