FQU2N Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	FQU2N60CTU onsemi	1	Low Crss ( Typ. 4.3pF); Low gate charge ( Typ. 8.5nC); RoHS compliant; 1.9A, 600V, RDS(on) = 4.7Ω(Max.) @VGS = 10 V, ID = 0.95A; 100% avalanche tested	Transistor Outline, Vertical	FQU2N60CTU	3D model available Symbol and footprint available 3	1 Download Model
	FQU2N90TU_AM002 onsemi	1	MOSFET 900V 1.6A 7.8Ohm N-Channel	Transistor Outline, Vertical	FQU2N90TU_AM002	3D model available Symbol and footprint available 3	1 Download Model
	FQU2N80TU onsemi	1	MOSFET 800V N-Channel QFET	Transistor Outline, Vertical	FQU2N80TU	3D model not available Symbol and footprint available 2	1 Download Model
	FQU2N90 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 1.7A I(D), 900V, 7.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251		FQU2N90	3D model not available Symbol and footprint not available 0	0 Build or Request

	FQU2N60C Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 1.9A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FQU2N60C	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQU2N80 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 1.8A I(D), 800V, 6.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251		FQU2N80	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQU2N60CTU Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 1.9A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FQU2N60CTU	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQU2N90TU-AM002 onsemi	1	Power Field-Effect Transistor, 1.7A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET		FQU2N90TU-AM002	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQU2N100TU Rochester Electronics LLC	1	1.6A, 1000V, 9ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, IPAK-3		FQU2N100TU	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQU2N60CTU Rochester Electronics LLC	1	1.9A, 600V, 4.7ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, IPAK-3		FQU2N60CTU	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQU2N60CTLTU Rochester Electronics LLC	1	1.9A, 600V, 4.7ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, IPAK-3		FQU2N60CTLTU	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQU2N100 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 1.6A I(D), 1000V, 9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FQU2N100	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQU2N50BTU-WS onsemi	1	Power MOSFET, N-Channel, QFET®, 500 V, 1.6 A, 5.3 Ω, IPAK, TO-251 3L (IPAK), 5040-TUBE		FQU2N50BTU-WS	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQU2N60CTLTU Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 1.9A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FQU2N60CTLTU	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQU2N60C onsemi	1	Power Field-Effect Transistor, 1.9A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FQU2N60C	3D model not available Symbol and footprint not available 0	0 Build or Request

	FQU2N90TU-WS onsemi	1	Power MOSFET, N-Channel, QFET®, 900 V, 1.7 A, 7.2 Ω, IPAK, TO-251 3L (IPAK), 5040-TUBE		FQU2N90TU-WS	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQU2N100TU Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 1.6A I(D), 1000V, 9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FQU2N100TU	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQU2N90TU_AM002 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 1.7A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET		FQU2N90TU_AM002	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQU2N90TU-AM002 Fairchild Semiconductor Corporation	1	TRANSISTOR,MOSFET,N-CHANNEL,900V V(BR)DSS,1.7A I(D),TO-251AA		FQU2N90TU-AM002	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQU2N90TU_WS onsemi	1	N-Channel QFET® MOSFET 900V, 1.7A, 7.2Ω, TO-251 3L (IPAK), 30240-RAIL		FQU2N90TU_WS	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQU2N50BTU_WS Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 1.6A I(D), 500V, 5.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, PLASTIC, IPAK-3		FQU2N50BTU_WS	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQU2N90TU_WS Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 1.7A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET		FQU2N90TU_WS	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQU2N50BTU_WS onsemi	1	N-Channel QFET® MOSFET, TO-251 3L (IPAK), 30240-RAIL		FQU2N50BTU_WS	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQU2N100TU onsemi	1	Low Crss ( Typ. 5pF); 100% avalanche tested; Low gate charge ( Typ. 12nC); RoHS Compliant; 1.6A, 1000V, RDS(on) = 9Ω(Max.) @VGS = 10 V, ID = 0.8A		FQU2N100TU	3D model available Symbol and footprint not available 1	1 Download Model
	FQU2N80TU Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 1.8A I(D), 800V, 6.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251		FQU2N80TU	3D model not available Symbol and footprint not available 0	0 Build or Request
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