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FQU2N60CTU - onsemi

Description: Low Crss ( Typ. 4.3pF); Low gate charge ( Typ. 8.5nC); RoHS compliant; 1.9A, 600V, RDS(on) = 4.7Ω(Max.) @VGS = 10 V, ID = 0.95A; 100% avalanche tested

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PCB Footprints
FQU2N60CTU - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - DPAK3 (IPAK) CASE 369AR ISSUE O
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FQU2N60CTU - onsemi  - 3D model - Transistor Outline, Vertical - DPAK3 (IPAK) CASE 369AR ISSUE O
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FQU2N60CTU Details

  • Manufacturer Part Number:

    FQU2N60CTU

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    IPAK-3 / DPAK-3 STRAIGHT LEAD

  • Manufacturer Package Code:

    369AR

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    120 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    1.9 A

  • Drain-source On Resistance-Max:

    4.7 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    44 W

  • Pulsed Drain Current-Max (IDM):

    7.6 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQU2N60CTU Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for FQU2N60CTU is a standard SOT-223 package with a minimum pad size of 2.5mm x 2.5mm and a thermal pad size of 3.5mm x 3.5mm.
  • To ensure proper biasing, the FQU2N60CTU requires a gate-source voltage (Vgs) between 2V and 10V, and a drain-source voltage (Vds) not exceeding 600V. A gate resistor (Rg) of 1kΩ to 10kΩ is also recommended to prevent oscillations.
  • The maximum allowed power dissipation for FQU2N60CTU is 125W at a case temperature (Tc) of 25°C. However, this value decreases as the case temperature increases, so thermal management is crucial to ensure reliable operation.
  • Yes, FQU2N60CTU is suitable for high-frequency switching applications up to 1MHz. However, it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure proper PCB layout and decoupling to minimize electromagnetic interference (EMI).
  • To protect the FQU2N60CTU from ESD, handle the device by the body or use an anti-static wrist strap or mat. Ensure the PCB has proper ESD protection, such as TVS diodes or ESD protection arrays, and follow proper soldering and handling procedures.

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FQU2N60CTU Overview

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Part Image FQU2N60CTU Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 1.9A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image FQU2N60C onsemi

Power Field-Effect Transistor, 1.9A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET