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FS100R17N3E4 - Infineon

Description: IGBT Modules LOW POWER ECONO

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PCB Footprints
FS100R17N3E4 - Infineon PCB footprint - Other - Other - FS100R17N3E4-5
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FS100R17N3E4 - Infineon  - 3D model - Other - FS100R17N3E4-5
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FS100R17N3E4 Details

  • Manufacturer Part Number:

    FS100R17N3E4

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Hungary

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    7

  • Case Connection:

    ISOLATED

  • Collector-Emitter Voltage-Max:

    1700 V

  • Configuration:

    BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

  • Gate-Emitter Thr Voltage-Max:

    6.4 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-XUFM-X35

  • Number of Elements:

    6

  • Number of Terminals:

    35

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    600 W

  • Reference Standard:

    UL APPROVED

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    1240 ns

  • Turn-on Time-Nom (ton):

    280 ns

  • VCEsat-Max:

    2.3 V

FS100R17N3E4 Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout in their application note AN2013-03, which includes guidelines for thermal vias, copper thickness, and component placement to minimize thermal resistance and ensure reliable operation.
  • When selecting a gate driver for the FS100R17N3E4, consider the driver's output current capability, voltage rating, and rise/fall times. Infineon recommends using a gate driver with a output current of at least 2A and a voltage rating of 15V or higher. The 2EDN driver family from Infineon is a suitable option.
  • Although not explicitly stated in the datasheet, Infineon recommends limiting voltage overshoots to 20% of the maximum rated voltage (VDS) to prevent damage to the MOSFET. This means the maximum allowed voltage overshoot would be approximately 240V (200V x 1.2).
  • To ensure safe operation during overvoltage conditions, use a voltage clamp or a transient voltage suppressor (TVS) diode in parallel with the MOSFET. This will help protect the device from voltage spikes and surges. Additionally, consider implementing overvoltage protection (OVP) and undervoltage protection (UVP) circuits in your design.
  • The FS100R17N3E4 is suitable for high-frequency switching applications up to 100 kHz. However, the optimal operating frequency range depends on the specific application, PCB layout, and thermal management. It's recommended to consult Infineon's application notes and simulation tools to determine the best operating frequency for your design.

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