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FS150R12KT4BOSA1 - Infineon

Description: Trans IGBT Module N-CH 1200V 150A 750W 35-Pin ECONO3-4 Tray

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FS150R12KT4BOSA1 - Infineon - PCB symbol
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PCB Footprints
FS150R12KT4BOSA1 - Infineon PCB footprint - Other - Other - FS150R12KT4BOSA1-2
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FS150R12KT4BOSA1 - Infineon - 3D model - Other - FS150R12KT4BOSA1-2
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FS150R12KT4BOSA1 Details

  • Manufacturer Part Number:

    FS150R12KT4BOSA1

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    MODULE

  • Pin Count:

    35

  • Country Of Origin:

    Hungary

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    150 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-XUFM-X35

  • Number of Elements:

    6

  • Number of Terminals:

    35

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    750 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    605 ns

  • Turn-on Time-Nom (ton):

    165 ns

  • VCEsat-Max:

    2.1 V

FS150R12KT4BOSA1 Frequently Asked Questions (FAQs)

  • The maximum junction temperature is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of 1.5 K/W or lower, and ensuring good airflow around the device. Additionally, the device's thermal pad should be connected to a copper plane on the PCB to dissipate heat efficiently.
  • The recommended gate resistor value is between 10 ohms and 20 ohms, depending on the specific application and switching frequency. A higher gate resistor value can help reduce electromagnetic interference (EMI), but may increase switching losses.
  • Yes, the FS150R12KT4BOSA1 can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the devices are properly matched and that the gate signals are synchronized to prevent uneven current sharing.
  • The maximum allowed voltage imbalance between the DC-link capacitors is 10% of the nominal voltage. Exceeding this limit can lead to uneven current sharing and reduced reliability.

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FS150R12KT4BOSA1 Overview

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