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FS25R12KE3G - Infineon

Description: 1200 V, 25 A sixpack IGBT module

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Symbol
FS25R12KE3G - Infineon - PCB symbol
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PCB Footprints
FS25R12KE3G - Infineon PCB footprint - Other - Other - FS25R12KE3G-2
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3D Models
FS25R12KE3G - Infineon - 3D model - Other - FS25R12KE3G-2
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FS25R12KE3G Details

  • Manufacturer Part Number:

    FS25R12KE3G

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    MODULE

  • Pin Count:

    28

  • Country Of Origin:

    Hungary

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    40 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-XUFM-X28

  • Number of Elements:

    6

  • Number of Terminals:

    28

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    145 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    610 ns

  • Turn-on Time-Nom (ton):

    140 ns

  • VCEsat-Max:

    2.1 V

FS25R12KE3G Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FS25R12KE3G is -40°C to 150°C, with a junction temperature (Tj) of up to 175°C.
  • To ensure reliability, follow the recommended thermal design and layout guidelines, use a suitable heat sink, and ensure proper cooling. Additionally, consider using a thermistor or temperature sensor to monitor the device temperature.
  • The recommended gate drive voltage for the FS25R12KE3G is between 10V and 15V, with a maximum gate-source voltage (Vgs) of ±20V.
  • Yes, the FS25R12KE3G can be used in a parallel configuration to increase power handling. However, ensure that the devices are properly matched, and the gate drive and layout are designed to minimize differences in switching times and thermal performance.
  • The maximum allowed dv/dt for the FS25R12KE3G is 50V/ns, with a recommended value of 10V/ns to minimize electromagnetic interference (EMI) and ensure reliable operation.

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FS25R12KE3G Overview

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