Please enter a minimum 3 letters or numbers
Technical Content
Part Image

FS25R12W1T4 - Infineon

Description: Infineon FS25R12W1T4, IGBT Module, Array 6, 45 A max, 1200 V AG-EASY1B-1

Download FS25R12W1T4 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
Send part feedback
Symbol
FS25R12W1T4 - Infineon - PCB symbol
click to zoom
PCB Footprints
FS25R12W1T4 - Infineon PCB footprint - Other - Other - FS25R12W1T4-2
click to zoom
3D Models
FS25R12W1T4 - Infineon - 3D model - Other - FS25R12W1T4-2
click to zoom

FS25R12W1T4 Details

  • Manufacturer Part Number:

    FS25R12W1T4

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    MODULE

  • Pin Count:

    23

  • Country Of Origin:

    Germany, Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    45 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-XUFM-X23

  • Number of Elements:

    6

  • Number of Terminals:

    23

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    205 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    505 ns

  • Turn-on Time-Nom (ton):

    80 ns

  • VCEsat-Max:

    2.25 V

FS25R12W1T4 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FS25R12W1T4 is -40°C to 150°C.
  • To ensure reliability, it's essential to follow the recommended thermal design and layout guidelines, and to implement adequate cooling mechanisms to keep the junction temperature within the specified range.
  • The recommended gate resistor value for the FS25R12W1T4 is typically in the range of 10 Ω to 100 Ω, depending on the specific application and switching frequency.
  • Yes, the FS25R12W1T4 is suitable for high-frequency switching applications up to 100 kHz, but it's essential to consider the device's switching losses, thermal performance, and layout parasitics to ensure reliable operation.
  • To protect the FS25R12W1T4, it's recommended to implement overvoltage protection (OVP) and overcurrent protection (OCP) circuits, and to ensure that the device is operated within its specified voltage and current ratings.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FS25R12W1T4 Overview

Use the download button to access the FS25R12W1T4 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FS25R, or try a keyword search, such as IGBTs

Parts related to FS25R12W1T4

Showing 0 results

Part Image

← Prev Next →
About Us Contact Us Terms of Service Do not sell or share my personal information Privacy Policy Digital Services Act Library Loader Twitter LinkedIn

All content Copyright © 2020, Supplyframe.com. All rights reserved. Back to top ↑

FS25R12W1T4 Alternates

Showing results

Image Part Number Model
Part Image FS25R12W1T4BOMA1 Infineon Technologies AG

Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel
Part Image FS25R12W1T4B11BOMA1 Infineon Technologies AG

Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel