3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Gate-Emitter Thr Voltage-Max:
6.4 V
Gate-Emitter Voltage-Max:
20 V
JESD-30 Code:
R-XUFM-X29
Number of Elements:
6
Number of Terminals:
29
Operating Temperature-Max:
150 °C
Operating Temperature-Min:
-40 °C
Package Body Material:
UNSPECIFIED
Package Shape:
RECTANGULAR
Package Style:
FLANGE MOUNT
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
2250 W
Reference Standard:
UL APPROVED
Surface Mount:
NO
Terminal Form:
UNSPECIFIED
Terminal Position:
UPPER
Transistor Application:
POWER CONTROL
Transistor Element Material:
SILICON
Turn-off Time-Nom (toff):
680 ns
Turn-on Time-Nom (ton):
290 ns
VCEsat-Max:
2.1 V
FS450R12OE4 Frequently Asked Questions (FAQs)
According to Infineon's application notes, the maximum allowed voltage imbalance is ±10% of the DC-link voltage to ensure proper operation and prevent damage to the module.
Infineon recommends using a thermal interface material (TIM) with a thermal conductivity of at least 1 W/mK and a thickness of 0.1-0.5 mm. The heat sink should be designed to provide a pressure of 30-50 N/cm² on the module.
Infineon recommends a gate resistance of 10-20 ohms for the IGBTs to ensure proper switching behavior and to prevent oscillations.
Infineon recommends using external protection circuits, such as overvoltage protection (OVP) and overcurrent protection (OCP) circuits, to prevent damage to the module. Additionally, a fuse or a circuit breaker can be used to protect the module from overcurrent conditions.
According to Infineon's datasheet, the FS450R12OE4 module is designed for 10,000 power cycles at 80% of the maximum junction temperature (Tj) of 150°C. However, the actual power cycling capability may vary depending on the application and operating conditions.
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FS450R12OE4 Overview
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