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FS50R06W1E3 - Infineon

Description: IGBT Module Trench Field Stop Three Phase Inverter 600 V 70 A 205 W Chassis Mount Module

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Symbol
FS50R06W1E3 - Infineon - PCB symbol
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PCB Footprints
FS50R06W1E3 - Infineon PCB footprint - Other - Other - 62.8 x 33.8 x 12mm
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FS50R06W1E3 Details

  • Manufacturer Part Number:

    FS50R06W1E3

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    MODULE

  • Pin Count:

    22

  • Country Of Origin:

    Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    70 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    COMPLEX

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-XUFM-X15

  • Number of Elements:

    6

  • Number of Terminals:

    15

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    205 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    370 ns

  • Turn-on Time-Nom (ton):

    250 ns

  • VCEsat-Max:

    1.9 V

FS50R06W1E3 Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the FS50R06W1E3 is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation.
  • To ensure proper cooling, make sure to attach a heat sink to the device, and apply a thermal interface material (TIM) to fill any gaps between the device and heat sink. Also, ensure good airflow around the heat sink.
  • The recommended gate resistor value for the FS50R06W1E3 is between 10 ohms and 20 ohms. However, the optimal value may vary depending on the specific application and switching frequency.
  • Yes, the FS50R06W1E3 is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the device is properly cooled and the gate drive circuit is optimized for high-frequency operation.
  • To protect the FS50R06W1E3 from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage, and a current sense resistor or a fuse to detect overcurrent conditions.

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FS50R06W1E3 Overview

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