Part Image

FS75R12KE3G - Infineon

Description: IGBT Modules 1200V 75A 3-PHASE

Download FS75R12KE3G Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
FS75R12KE3G - Infineon PCB footprint - Other - Other - FS75R12KE3G-2
click to zoom
3D Models
FS75R12KE3G - Infineon  - 3D model - Other - FS75R12KE3G-2
click to zoom

FS75R12KE3G Details

  • Manufacturer Part Number:

    FS75R12KE3G

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    MODULE

  • Pin Count:

    35

  • Country Of Origin:

    Hungary

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    100 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-XUFM-X35

  • Number of Elements:

    6

  • Number of Terminals:

    35

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    350 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    610 ns

  • Turn-on Time-Nom (ton):

    340 ns

  • VCEsat-Max:

    2.1 V

FS75R12KE3G Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the FS75R12KE3G is 175°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure proper cooling, it's essential to provide a sufficient heat sink and thermal interface material between the device and the heat sink. The heat sink should be designed to dissipate the maximum power loss of the device, and the thermal interface material should have a low thermal resistance.
  • The recommended gate resistor value for the FS75R12KE3G depends on the specific application and switching frequency. As a general guideline, a gate resistor value between 10 ohms and 100 ohms is suitable for most applications. However, it's recommended to consult the datasheet and application notes for more specific guidance.
  • Yes, the FS75R12KE3G is suitable for high-reliability applications. Infineon Technologies AG has qualified the device according to the AEC-Q101 standard, which ensures the device meets the stringent requirements for automotive and industrial applications.
  • To protect the FS75R12KE3G from overvoltage and overcurrent, it's recommended to use a suitable voltage regulator and overcurrent protection circuitry. Additionally, consider using a TVS (transient voltage suppressor) diode to protect the device from voltage spikes and transients.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FS75R12KE3G Overview

Use the download button to access the FS75R12KE3G schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FS75R, or try a keyword search, such as IGBTs

Parts related to FS75R12KE3G

Showing 0 results