BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Gate-Emitter Voltage-Max:
20 V
JESD-30 Code:
R-XUFM-X35
Number of Elements:
6
Number of Terminals:
35
Operating Temperature-Max:
150 °C
Package Body Material:
UNSPECIFIED
Package Shape:
RECTANGULAR
Package Style:
FLANGE MOUNT
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
350 W
Qualification Status:
Not Qualified
Surface Mount:
NO
Terminal Form:
UNSPECIFIED
Terminal Position:
UPPER
Transistor Element Material:
SILICON
Turn-off Time-Nom (toff):
610 ns
Turn-on Time-Nom (ton):
340 ns
VCEsat-Max:
2.1 V
FS75R12KE3G Frequently Asked Questions (FAQs)
The maximum junction temperature of the FS75R12KE3G is 175°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
To ensure proper cooling, it's essential to provide a sufficient heat sink and thermal interface material between the device and the heat sink. The heat sink should be designed to dissipate the maximum power loss of the device, and the thermal interface material should have a low thermal resistance.
The recommended gate resistor value for the FS75R12KE3G depends on the specific application and switching frequency. As a general guideline, a gate resistor value between 10 ohms and 100 ohms is suitable for most applications. However, it's recommended to consult the datasheet and application notes for more specific guidance.
Yes, the FS75R12KE3G is suitable for high-reliability applications. Infineon Technologies AG has qualified the device according to the AEC-Q101 standard, which ensures the device meets the stringent requirements for automotive and industrial applications.
To protect the FS75R12KE3G from overvoltage and overcurrent, it's recommended to use a suitable voltage regulator and overcurrent protection circuitry. Additionally, consider using a TVS (transient voltage suppressor) diode to protect the device from voltage spikes and transients.
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FS75R12KE3G Overview
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