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FS75R12KS4 - Infineon

Description: IGBT Modules 1200V 75A 3-PHASE

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Symbol
FS75R12KS4 - Infineon - PCB symbol
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PCB Footprints
FS75R12KS4 - Infineon PCB footprint - Other - Other - FS75R12KS4-3
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3D Models
FS75R12KS4 - Infineon - 3D model - Other - FS75R12KS4-3
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FS75R12KS4 Details

  • Manufacturer Part Number:

    FS75R12KS4

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    MODULE

  • Pin Count:

    39

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    100 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-XUFM-X39

  • Number of Elements:

    6

  • Number of Terminals:

    39

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    500 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    390 ns

  • Turn-on Time-Nom (ton):

    190 ns

  • VCEsat-Max:

    3.7 V

FS75R12KS4 Frequently Asked Questions (FAQs)

  • According to Infineon's application notes, the maximum allowed voltage imbalance is ±10% of the nominal voltage between any two phases.
  • Infineon recommends using a heat sink with a thermal resistance of ≤ 0.5 K/W, and ensuring a minimum air gap of 1 mm between the heat sink and the module. Additionally, the module should be mounted on a PCB with a thermal vias design to dissipate heat effectively.
  • Infineon recommends using a gate resistance of 10 Ω to 20 Ω for optimal switching performance and to minimize electromagnetic interference (EMI).
  • Yes, the FS75R12KS4 can be used in a parallel configuration, but it requires careful consideration of the current sharing and thermal management. Infineon provides guidelines for parallel operation in their application notes.
  • The maximum allowed dv/dt for the FS75R12KS4 is 10 kV/μs, as specified in the datasheet. Exceeding this value may lead to premature aging or failure of the module.

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FS75R12KS4 Overview

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