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FZ400R17KE3 - Infineon

Description: IGBT Modules N-CH 1.7KV 620A

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FZ400R17KE3 Details

  • Manufacturer Part Number:

    FZ400R17KE3

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    MODULE

  • Pin Count:

    4

  • Country Of Origin:

    Hungary

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    7

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    780 A

  • Collector-Emitter Voltage-Max:

    1700 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-XUFM-X4

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2270 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    1230 ns

  • Turn-on Time-Nom (ton):

    400 ns

  • VCEsat-Max:

    2.45 V

FZ400R17KE3 Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout in their application note AN2013-03, which includes guidelines for thermal vias, copper thickness, and component placement to minimize thermal resistance and ensure reliable operation.
  • Infineon recommends using a gate driver with a minimum output current of 2A and a voltage rating that matches the IGBT's gate-emitter voltage. The driver should also have a suitable propagation delay and rise/fall time to ensure proper switching. Consult Infineon's gate driver selection guide for more information.
  • The FZ400R17KE3 has a maximum allowed overcurrent of 2.5 times the nominal current (400A) for a duration of 10ms. To protect the module, use a fast-acting fuse or a current sensor with a threshold set to 1000A, and implement a shutdown circuit that disconnects the power supply in case of an overcurrent event.
  • Infineon recommends a maximum junction temperature of 150°C for the FZ400R17KE3. Ensure good thermal contact between the module and the heat sink, and use a heat sink with a thermal resistance of ≤ 0.5 K/W. Monitor the module's temperature using a thermocouple or thermistor and adjust the cooling system accordingly.
  • The FZ400R17KE3 is designed to meet EMI and RFI standards, but proper PCB layout, grounding, and shielding are still essential. Use a Faraday shield or a metal enclosure to contain EMI, and ensure that the module's pins are properly decoupled and filtered. Consult Infineon's EMI and RFI guidelines for more information.

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FZ400R17KE3 Overview

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Part Image FZ400R17KE3HOSA1 Infineon Technologies AG

Insulated Gate Bipolar Transistor, 780A I(C), 1700V V(BR)CES, N-Channel