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FZ600R12KE4HOSA1 - Infineon

Description: IGBT, MODULE, N-CH, 1.2KV, 600A; Transistor Polarity:N Channel; DC Collector Current:600A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:3kW; Collector Emitter Voltage V(br)ceo:1.2kV; Transisto

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FZ600R12KE4HOSA1 Details

  • Manufacturer Part Number:

    FZ600R12KE4HOSA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    MODULE

  • Pin Count:

    5

  • Country Of Origin:

    Hungary

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    22 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    600 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • JESD-30 Code:

    R-XUFM-X3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    810 ns

  • Turn-on Time-Nom (ton):

    370 ns

FZ600R12KE4HOSA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the FZ600R12KE4HOSA1 is 150°C, as specified in the datasheet. However, it's recommended to operate the module within a temperature range of 25°C to 125°C for optimal performance and reliability.
  • To ensure proper thermal management, it's essential to provide adequate heat sinking, ensure good thermal contact between the module and heat sink, and maintain a clean and dust-free environment. Additionally, consider using thermal interface materials and thermal sensors to monitor the module's temperature.
  • The recommended gate resistor value for the FZ600R12KE4HOSA1 is typically between 10 ohms to 20 ohms, depending on the specific application and switching frequency. However, it's essential to consult the datasheet and application notes for more detailed guidance on gate resistor selection.
  • Yes, the FZ600R12KE4HOSA1 can be used in a parallel configuration to increase the current handling capability. However, it's crucial to ensure that the modules are properly matched, and the gate drive circuits are synchronized to prevent uneven current sharing and oscillations.
  • To minimize electromagnetic interference (EMI) and ensure electromagnetic compatibility (EMC), it's essential to follow proper PCB design practices, use shielding, and implement filtering and grounding techniques. Additionally, consider using EMI filters and common-mode chokes to reduce emissions and improve immunity.

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FZ600R12KE4HOSA1 Overview

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