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FZ600R12KP4 - Infineon

Description: IGBT Modules IGBT 1200V 600A

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FZ600R12KP4 - Infineon  - 3D model
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FZ600R12KP4 Details

  • Manufacturer Part Number:

    FZ600R12KP4

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    MODULE

  • Pin Count:

    5

  • Country Of Origin:

    Hungary

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    2400 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-XUFM-X4

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    3000 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    840 ns

  • Turn-on Time-Nom (ton):

    370 ns

  • VCEsat-Max:

    2.05 V

FZ600R12KP4 Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the FZ600R12KP4 is 150°C, but it's recommended to operate it at a maximum of 125°C for reliable operation and to ensure a long lifespan.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 1.5 K/W, and ensuring good airflow around the device. Additionally, the PCB design should allow for good thermal conduction and radiation.
  • The recommended gate resistor value for the FZ600R12KP4 is between 10 ohms and 100 ohms, depending on the specific application and switching frequency. A higher gate resistor value can help reduce EMI, but may increase switching losses.
  • Yes, the FZ600R12KP4 can be used in a parallel configuration, but it's essential to ensure that the devices are properly matched and that the gate drive signals are synchronized to prevent uneven current sharing.
  • The maximum allowed dv/dt for the FZ600R12KP4 is 10 kV/μs, but it's recommended to limit it to 5 kV/μs or less to ensure reliable operation and minimize the risk of failure.

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FZ600R12KP4 Overview

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