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GS-065-030-2-L-MR - Infineon

Description: GaN FETs LEGACY GAN SYSTEMS

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GS-065-030-2-L-MR Details

  • Manufacturer Part Number:

    GS-065-030-2-L-MR

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Package Description:

    DFN-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    22 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    1

  • Case Connection:

    SOURCE

  • Configuration:

    SINGLE WITH BUILT-IN KELVIN SENSOR

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    30 A

  • Drain-source On Resistance-Max:

    0.068 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    0.6 pF

  • JESD-30 Code:

    S-PDSO-N8

  • Moisture Sensitivity Level:

    3

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    60 A

  • Surface Mount:

    YES

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    GALLIUM NITRIDE

GS-065-030-2-L-MR Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout and thermal management guide in their application note AN2014-01, which should be followed to ensure optimal performance and thermal dissipation.
  • Infineon provides EMC guidelines and recommendations in their application note AN2008-03, which should be followed to ensure electromagnetic compatibility with the GS-065-030-2-L-MR.
  • The safe operating area (SOA) limits for the GS-065-030-2-L-MR are not explicitly stated in the datasheet, but can be obtained by contacting Infineon's technical support or by referring to their application note AN2013-01, which provides general SOA guidelines for their IGBT modules.
  • Infineon provides handling and storage guidelines in their application note AN2009-01, which should be followed to prevent damage and ensure reliability of the GS-065-030-2-L-MR.
  • Infineon provides recommended gate drive circuits and component selection guidelines in their application note AN2012-01, which should be followed to ensure proper gate drive and device operation.

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GS-065-030-2-L-MR Overview

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